| PART |
Description |
Maker |
| BTS441R BTS441 BTS441RG BTS441RS Q67060-S6119 Q670 |
Smart Highside Power Switch One Channel: 20mз Status Feedback
IC,PERIPHERAL DRIVER,1 DRIVER,CMOS/MOS,SIP,5PIN,PLASTIC
From old datasheet system
Smart Highside Power Switch One Channel: 20m Status Feedback
Smart High Side Switches - 4,75-41V, 20mΩ 21A TO220 or TO 263
Smart Highside Power Switch One Channel: 20m?/a> Status Feedback
|
INFINEON[Infineon Technologies AG]
|
| MC33285 |
MC33285 Automotive Dual High Side TMOS Driver
Automotive Dual High Side TMOS Driver
|
Motorola
|
| MC33285DR2 MC33285D 33285 33285_07 MCZ33285EF MCZ3 |
Dual High-Side TMOS Driver
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MCZ33285 |
Dual High-Side TMOS Driver
|
Freescale Semiconductor
|
| MGICP020 |
Low rDS Small Signal MOSFET TMOS P-Channel High Side Driver
|
Motorola Semiconductor
|
| MGSF3454VT1 MGSF3454VT1_D ON1906 MGSF3454VT1-D ON1 |
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA INC
|
| MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
| MTD1N80E MTD1N80E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
